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DMT8007LPSW-13
manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 61V~100V POWERDI50
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.8V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
45.3 NC @ 10 V
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 14A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2682 PF @ 40 V
Mounting Type:
Surface Mount, Wettable Flank
Series:
-
Supplier Device Package:
PowerDI5060-8 (Type UX)
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Power Dissipation (Max):
1.5W (Ta), 104W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMT8007
Model Number:
DMT8007LPSW-13
Introduction
N-Channel 80 V 100A (Tc) 1.5W (Ta), 104W (Tc) Surface Mount, Wettable Flank PowerDI5060-8 (Type UX)
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