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BSC200P03LSG
manufacturer:
Infineon Technologies
Description:
P-CHANNEL POWER MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
48.5 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
2430 PF @ 15 V
Series:
OptiMOS®
Vgs (Max):
±25V
Vgs(th) (Max) @ Id:
1V @ 100µA
Supplier Device Package:
PG-TDSON-8-6
Rds On (Max) @ Id, Vgs:
20mOhm @ 12.5A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
2.5W (Ta), 63W (Tc)
Package / Case:
8-PowerTDFN
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
9.9A (Ta), 12.5A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
BSC200P03LSG
Introduction
P-Channel 30 V 9.9A (Ta), 12.5A (Tc) 2.5W (Ta), 63W (Tc) Surface Mount PG-TDSON-8-6
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