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SI2325DS-T1-BE3
manufacturer:
Vishay Siliconix
Description:
P-CHANNEL 150-V (D-S) MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
12 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
510 PF @ 25 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Supplier Device Package:
SOT-23-3 (TO-236)
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 500mA, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Power Dissipation (Max):
750mW (Ta)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Drain To Source Voltage (Vdss):
150 V
Current - Continuous Drain (Id) @ 25°C:
530mA (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
SI2325DS-T1-BE3
Introduction
P-Channel 150 V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
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