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UPA2816T1S-E2-AT
manufacturer:
Renesas Electronics America Inc
Description:
MOSFET P-CH 30V 17A 8HWSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerWDFN
Gate Charge (Qg) (Max) @ Vgs:
33.4 NC @ 10 V
Rds On (Max) @ Id, Vgs:
15.5mOhm @ 17A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
+20V, -25V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1160 PF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-HWSON (3.3x3.3)
Mfr:
Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Power Dissipation (Max):
1.5W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
UPA2816
Model Number:
UPA2816T1S-E2-AT
Introduction
P-Channel 30 V 17A (Tc) 1.5W (Ta) Surface Mount 8-HWSON (3.3x3.3)
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