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ISC028N04NM5ATMA1
manufacturer:
Infineon Technologies
Description:
40V 2.8M OPTIMOS MOSFET SUPERSO8
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.4V @ 30µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
38 NC @ 10 V
Rds On (Max) @ Id, Vgs:
2.8mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
7V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2700 PF @ 20 V
Mounting Type:
Surface Mount
Series:
OptiMOS™-5
Supplier Device Package:
PG-TDSON-8 FL
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
24A (Ta), 121A (Tc)
Power Dissipation (Max):
3W (Ta), 75W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
ISC028N
Model Number:
ISC028N04NM5ATMA1
Introduction
N-Channel 40 V 24A (Ta), 121A (Tc) 3W (Ta), 75W (Tc) Surface Mount PG-TDSON-8 FL
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