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DMN39M1LK3-13
manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 25V~30V TO252 T&R
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
38.6 NC @ 10 V
Rds On (Max) @ Id, Vgs:
5.5mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2253 PF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-252, (D-Pak)
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
17.9A (Ta), 89.3A (Tc)
Power Dissipation (Max):
1.4W (Ta), 65.7W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMN39
Model Number:
DMN39M1LK3-13
Introduction
N-Channel 30 V 17.9A (Ta), 89.3A (Tc) 1.4W (Ta), 65.7W (Tc) Surface Mount TO-252, (D-Pak)
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