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NP35N055YUK-E1-AY
manufacturer:
Renesas Electronics America Inc
Description:
MOSFET N-CH 55V 35A 8HSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
175°C
Package / Case:
8-PowerLDFN
Gate Charge (Qg) (Max) @ Vgs:
57 NC @ 10 V
Rds On (Max) @ Id, Vgs:
6.7mOhm @ 18A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
55 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3360 PF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-HSON (5x5.4)
Mfr:
Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C:
35A (Tc)
Power Dissipation (Max):
1W (Ta), 97W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NP35N055
Model Number:
NP35N055YUK-E1-AY
Introduction
N-Channel 55 V 35A (Tc) 1W (Ta), 97W (Tc) Surface Mount 8-HSON (5x5.4)
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