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RM6N800IP
Manufacturer:
Rectron USA
Description:
MOSFET N-CHANNEL 800V 6A TO251
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Product Status:
Active
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds:
1290 PF @ 50 V
Series:
-
Vgs (Max):
±30V
Package:
Tube
Supplier Device Package:
TO-251
Rds On (Max) @ Id, Vgs:
900mOhm @ 4A, 10V
Mfr:
Rectron USA
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
98W (Tc)
Package / Case:
TO-251-3 Stub Leads, IPak
Drain To Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Technology:
MOSFET (Metal Oxide)
Model Number:
RM6N800IP
Introduction
N-Channel 800 V 6A (Tc) 98W (Tc) Through Hole TO-251
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| Image | Part # | Description | |
|---|---|---|---|
|
|
RM130N200T7 |
MOSFET N-CHANNEL 200V 132A TO247
|
|
|
|
RM45N600T7 |
MOSFET N-CH 600V 44.5A TO247
|
|
|
|
RM47N600T7 |
MOSFET N-CHANNEL 600V 47A TO247
|
|
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|
RM21N650T7 |
MOSFET N-CHANNEL 650V 21A TO247
|
|
|
|
RM180N100T2 |
MOSFET N-CH 100V 180A TO220-3
|
|
|
|
RM11N800TI |
MOSFET N-CHANNEL 800V 11A TO220F
|
|
|
|
RM140N150T2 |
MOSFET N-CH 150V 140A TO220-3
|
|
|
|
RM110N150HD |
MOSFET N-CH 150V 113A TO263-2
|
|
|
|
RM11N800T2 |
MOSFET N-CH 800V 11A TO220-3
|
|
|
|
RM21N650T2 |
MOSFET N-CH 650V 21A TO220-3
|
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