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BSC029N025SG
manufacturer:
Infineon Technologies
Description:
N-CHANNEL POWER MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
41 NC @ 5 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
5090 PF @ 15 V
Series:
OptiMOS™
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2V @ 80µA
Supplier Device Package:
PG-TDSON-8-1
Rds On (Max) @ Id, Vgs:
2.9mOhm @ 50A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
2.8W (Ta), 78W (Tc)
Package / Case:
8-PowerTDFN
Drain To Source Voltage (Vdss):
25 V
Current - Continuous Drain (Id) @ 25°C:
24A (Ta), 100A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
BSC029N025SG
Introduction
N-Channel 25 V 24A (Ta), 100A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount PG-TDSON-8-1
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