english
ISZ106N12LM6ATMA1
manufacturer:
Infineon Technologies
Description:
OPTIMOS 6 POWER-TRANSISTOR,120V
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.2V @ 35µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
26 NC @ 10 V
Rds On (Max) @ Id, Vgs:
10.6mOhm @ 28A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
3.3V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
120 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1800 PF @ 60 V
Mounting Type:
Surface Mount
Series:
OptiMOS™ 6
Supplier Device Package:
PG-TSDSON-8 FL
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
10A (Ta), 62A (Tc)
Power Dissipation (Max):
2.5W (Ta), 94W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
ISZ106
Model Number:
ISZ106N12LM6ATMA1
Introduction
N-Channel 120 V 10A (Ta), 62A (Tc) 2.5W (Ta), 94W (Tc) Surface Mount PG-TSDSON-8 FL
Send RFQ
Stock:
MOQ: