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DMTH10H4M5LPSW
manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 61V~100V POWERDI50
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
80 NC @ 10 V
Rds On (Max) @ Id, Vgs:
4.9mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4843 PF @ 50 V
Mounting Type:
Surface Mount, Wettable Flank
Series:
-
Supplier Device Package:
PowerDI5060-8 (Type UX)
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
20A (Ta), 107A (Tc)
Power Dissipation (Max):
4.7W (Ta), 136W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMTH10
Model Number:
DMTH10H4M5LPSW
Introduction
N-Channel 100 V 20A (Ta), 107A (Tc) 4.7W (Ta), 136W (Tc) Surface Mount, Wettable Flank PowerDI5060-8 (Type UX)
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