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SI4190BDY-T1-GE3
manufacturer:
Vishay Siliconix
Description:
N-CHANNEL 100 V (D-S) MOSFET SO-
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
95 NC @ 10 V
Rds On (Max) @ Id, Vgs:
9.3mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4150 PF @ 50 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
8-SOIC
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
12A (Ta), 17A (Tc)
Power Dissipation (Max):
3.8W (Ta), 8.4W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI4190
Model Number:
SI4190BDY-T1-GE3
Introduction
N-Channel 100 V 12A (Ta), 17A (Tc) 3.8W (Ta), 8.4W (Tc) Surface Mount 8-SOIC
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IRFB13N50A |
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IRFP460P |
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IRFB17N50L |
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