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BSP100,135
manufacturer:
NXP USA Inc.
Description:
MOSFET N-CH 30V 3.2A SOT223
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
6 NC @ 10 V
Product Status:
Obsolete
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
250 PF @ 20 V
Series:
TrenchMOS™
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.8V @ 1mA
Supplier Device Package:
SOT-223
Rds On (Max) @ Id, Vgs:
100mOhm @ 2.2A, 10V
Mfr:
NXP USA Inc.
Operating Temperature:
-65°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
8.3W (Tc)
Package / Case:
TO-261-4, TO-261AA
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
3.2A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
BSP100,135
Introduction
N-Channel 30 V 3.2A (Ta) 8.3W (Tc) Surface Mount SOT-223
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