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RJK03E3DNS-00#J5
manufacturer:
Renesas Electronics America Inc
Description:
MOSFET N-CH 30V 14A 8HWSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
Product Status:
Obsolete
Mounting Type:
Surface Mount
Package:
Bulk
Vgs(th) (Max) @ Id:
-
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
5.7 NC @ 4.5 V
Supplier Device Package:
8-HWSON (3.3x3.3)
Rds On (Max) @ Id, Vgs:
11.6mOhm @ 7A, 10V
Mfr:
Renesas Electronics America Inc
Operating Temperature:
150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
1050 PF @ 10 V
Drain To Source Voltage (Vdss):
30 V
Power Dissipation (Max):
10W (Tc)
Package / Case:
8-PowerWDFN
Current - Continuous Drain (Id) @ 25°C:
14A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
RJK03E3DNS-00#J5
Introduction
N-Channel 30 V 14A (Ta) 10W (Tc) Surface Mount 8-HWSON (3.3x3.3)
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