HAT2173N-EL-E
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
Product Status:
Obsolete
Mounting Type:
Surface Mount
Package:
Bulk
Vgs(th) (Max) @ Id:
6V @ 20mA
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
61 NC @ 10 V
Supplier Device Package:
8-LFPAK-iV
Rds On (Max) @ Id, Vgs:
15.3mOhm @ 12.5A, 10V
Mfr:
Renesas Electronics America Inc
Operating Temperature:
150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
4350 PF @ 10 V
Drain To Source Voltage (Vdss):
100 V
Power Dissipation (Max):
30W (Tc)
Package / Case:
8-PowerSOIC (0.154", 3.90mm Width)
Current - Continuous Drain (Id) @ 25°C:
25A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
HAT2173N-EL-E
Introduction
N-Channel 100 V 25A (Ta) 30W (Tc) Surface Mount 8-LFPAK-iV
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