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BUZ32H3045A
manufacturer:
Infineon Technologies
Description:
N-CHANNEL POWER MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds:
530 PF @ 25 V
Series:
SIPMOS®
Vgs (Max):
±20V
Package:
Bulk
Supplier Device Package:
PG-TO263-3
Rds On (Max) @ Id, Vgs:
400mOhm @ 6A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
75W (Tc)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain To Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
9.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Model Number:
BUZ32H3045A
Introduction
N-Channel 200 V 9.5A (Tc) 75W (Tc) Surface Mount PG-TO263-3
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