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IPB031NE7N3 G
manufacturer:
Infineon Technologies
Description:
N-CHANNEL POWER MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
117 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
8130 PF @ 37.5 V
Series:
OptiMOS™ 3
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3.8V @ 155µA
Supplier Device Package:
PG-TO263-3-2
Rds On (Max) @ Id, Vgs:
3.1mOhm @ 100A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
214W (Tc)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain To Source Voltage (Vdss):
75 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
IPB031NE7N3 G
Introduction
N-Channel 75 V 100A (Tc) 214W (Tc) Surface Mount PG-TO263-3-2
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