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IPB230N06L3G
manufacturer:
Infineon Technologies
Description:
N-CHANNEL POWER MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
10 NC @ 4.5 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
1600 PF @ 30 V
Series:
OptiMOS™3
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.2V @ 11µA
Supplier Device Package:
PG-TO263-3
Rds On (Max) @ Id, Vgs:
23mOhm @ 30A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
36W (Tc)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
IPB230N06L3G
Introduction
N-Channel 60 V 30A (Tc) 36W (Tc) Surface Mount PG-TO263-3
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