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IPD60R600E6BTMA1
manufacturer:
Infineon Technologies
Description:
N-CHANNEL POWER MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 200µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
20.5 NC @ 10 V
Rds On (Max) @ Id, Vgs:
600mOhm @ 2.4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
440 PF @ 100 V
Mounting Type:
Surface Mount
Series:
CoolMOS™ E6
Supplier Device Package:
PG-TO252-3-313
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
7.3A (Tc)
Power Dissipation (Max):
63W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPD60R
Model Number:
IPD60R600E6BTMA1
Introduction
N-Channel 600 V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3-313
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