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SPPO4N80C3
manufacturer:
Infineon Technologies
Description:
N-CHANNEL POWER MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
31 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
570 PF @ 100 V
Series:
CoolMOS™
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3.9V @ 240µA
Supplier Device Package:
PG-TO220-3
Rds On (Max) @ Id, Vgs:
1.3Ohm @ 2.5A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
63W (Tc)
Package / Case:
TO-220-3
Drain To Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
SPPO4N80C3
Introduction
N-Channel 800 V 4A (Tc) 63W (Tc) Through Hole PG-TO220-3
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