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IPD70N04S307ATMA1
manufacturer:
Infineon Technologies
Description:
N-CHANNEL POWER MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 50µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
40 NC @ 10 V
Rds On (Max) @ Id, Vgs:
6mOhm @ 70A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain To Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2700 PF @ 25 V
Mounting Type:
Surface Mount
Series:
OptiMOS®
Supplier Device Package:
PG-TO252-3-11
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
82A (Tc)
Power Dissipation (Max):
79W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPD70
Model Number:
IPD70N04S307ATMA1
Introduction
N-Channel 40 V 82A (Tc) 79W (Tc) Surface Mount PG-TO252-3-11
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