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SPU21N05L
manufacturer:
Infineon Technologies
Description:
N-CHANNEL POWER MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
36 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
700 PF @ 25 V
Series:
SIPMOS®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2V @ 40µA
Supplier Device Package:
P-TO251-3-1
Rds On (Max) @ Id, Vgs:
40mOhm @ 14A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
55W (Tc)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Drain To Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
SPU21N05L
Introduction
N-Channel 55 V 20A (Tc) 55W (Tc) Through Hole P-TO251-3-1
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