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BUK752R3-40E,127
manufacturer:
NXP USA Inc.
Description:
MOSFET N-CH 40V 120A TO220AB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Vgs(th) (Max) @ Id:
4V @ 1mA
Series:
Automotive, AEC-Q101, TrenchMOS™
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
109.2 NC @ 10 V
Supplier Device Package:
TO-220AB
Rds On (Max) @ Id, Vgs:
2.3mOhm @ 25A, 10V
Mfr:
NXP USA Inc.
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
8500 PF @ 25 V
Drain To Source Voltage (Vdss):
40 V
Power Dissipation (Max):
293W (Ta)
Package / Case:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
120A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
BUK752R3-40E,127
Introduction
N-Channel 40 V 120A (Ta) 293W (Ta) Through Hole TO-220AB
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