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IPI126N10N3G
manufacturer:
Infineon Technologies
Description:
N-CHANNEL POWER MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
35 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
2500 PF @ 50 V
Series:
OptiMOS™
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3.5V @ 46µA
Supplier Device Package:
PG-TO262-3
Rds On (Max) @ Id, Vgs:
12.6mOhm @ 46A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Power Dissipation (Max):
94W (Tc)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
58A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
IPI126N10N3G
Introduction
N-Channel 100 V 58A (Tc) 94W (Tc) Through Hole PG-TO262-3
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