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BSZ105N04NSG
manufacturer:
Infineon Technologies
Description:
OPTLMOS POWER-MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
17 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
1300 PF @ 20 V
Series:
OptiMOS™3
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 14µA
Supplier Device Package:
PG-TSDSON-8
Rds On (Max) @ Id, Vgs:
10.5mOhm @ 20A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
2.1W (Ta), 35W (Tc)
Package / Case:
8-PowerTDFN
Drain To Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
11A (Ta), 40A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
BSZ105N04NSG
Introduction
N-Channel 40 V 11A (Ta), 40A (Tc) 2.1W (Ta), 35W (Tc) Surface Mount PG-TSDSON-8
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