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NP180N04TUG-E1-AY
manufacturer:
Renesas Electronics America Inc
Description:
180A, 40V, N-CHANNEL MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
390 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
25700 PF @ 25 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
TO-263-7
Rds On (Max) @ Id, Vgs:
1.5mOhm @ 90A, 10V
Mfr:
Renesas Electronics America Inc
Operating Temperature:
175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
1.8W (Ta), 288W (Tc)
Package / Case:
TO-263-7, D²Pak (6 Leads + Tab)
Drain To Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
180A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
NP180N04TUG-E1-AY
Introduction
N-Channel 40 V 180A (Tc) 1.8W (Ta), 288W (Tc) Surface Mount TO-263-7
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