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PSMN4R3-100ES,127
manufacturer:
NXP USA Inc.
Description:
TRANSISTOR >30MHZ
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
170 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
9900 PF @ 50 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 1mA
Supplier Device Package:
I2PAK
Rds On (Max) @ Id, Vgs:
4.3mOhm @ 25A, 10V
Mfr:
NXP USA Inc.
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
338W (Tc)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
PSMN4R3-100ES,127
Introduction
N-Channel 100 V 120A (Tc) 338W (Tc) Through Hole I2PAK
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