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SIHP4N80E-BE3
manufacturer:
Vishay Siliconix
Description:
N-CHANNEL 600V
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
32 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tape & Reel (TR)
Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds:
622 PF @ 100 V
Series:
E
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
TO-220AB
Rds On (Max) @ Id, Vgs:
1.27Ohm @ 2A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
69W (Tc)
Package / Case:
TO-220-3
Drain To Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
4.3A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
SIHP4N80E-BE3
Introduction
N-Channel 800 V 4.3A (Tc) 69W (Tc) Through Hole TO-220AB
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IRFZ44RSTRR |
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IRFP460P |
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IRFB17N50L |
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