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SIHA6N65E-GE3
manufacturer:
Vishay Siliconix
Description:
N-CHANNEL 650V
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
48 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tape & Reel (TR)
Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds:
1640 PF @ 100 V
Series:
E
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
TO-220 Full Pack
Rds On (Max) @ Id, Vgs:
600mOhm @ 3A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
31W (Tc)
Package / Case:
TO-220-3 Full Pack
Drain To Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
7A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
SIHA6N65E-GE3
Introduction
N-Channel 650 V 7A (Tc) 31W (Tc) Through Hole TO-220 Full Pack
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