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ISC0806NLSATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 100V 16A/97A TDSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.3V @ 61µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
49 NC @ 10 V
Rds On (Max) @ Id, Vgs:
5.4mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3400 PF @ 50 V
Mounting Type:
Surface Mount
Series:
OptiMOS™ 5
Supplier Device Package:
PG-TDSON-8-7
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
16A (Ta), 97A (Tc)
Power Dissipation (Max):
2.5W (Ta), 96W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
ISC0806N
Model Number:
ISC0806NLSATMA1
Introduction
N-Channel 100 V 16A (Ta), 97A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-7
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