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IPD100N04S4L02ATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL_30/40V
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.2V @ 95µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
156 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.9mOhm @ 100A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
40 V
Vgs (Max):
+20V, -16V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
12800 PF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, OptiMOS™
Supplier Device Package:
PG-TO252-3-313
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Power Dissipation (Max):
150W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPD100
Model Number:
IPD100N04S4L02ATMA1
Introduction
N-Channel 40 V 100A (Tc) 150W (Tc) Surface Mount PG-TO252-3-313
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