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IQE006NE2LM5CGSCATMA1
manufacturer:
Infineon Technologies
Description:
OPTIMOS LOWVOLTAGE POWER MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
82 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
5453 PF @ 12 V
Series:
OptiMOS™ 5
Vgs (Max):
±16V
Vgs(th) (Max) @ Id:
2V @ 250µA
Supplier Device Package:
PG-WHTFN-9-1
Rds On (Max) @ Id, Vgs:
0.58mOhm @ 20A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
2.1W (Ta), 89W (Tc)
Package / Case:
9-PowerWDFN
Drain To Source Voltage (Vdss):
25 V
Current - Continuous Drain (Id) @ 25°C:
47A (Ta), 310A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
IQE006NE2LM5CGSCATMA1
Introduction
N-Channel 25 V 47A (Ta), 310A (Tc) 2.1W (Ta), 89W (Tc) Surface Mount PG-WHTFN-9-1
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