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IPB029N06N3GE8187ATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 60V 120A D2PAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 118µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
165 NC @ 10 V
Rds On (Max) @ Id, Vgs:
3.2mOhm @ 100A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
13000 PF @ 30 V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-TO263-3
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Power Dissipation (Max):
188W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPB029
Model Number:
IPB029N06N3GE8187ATMA1
Introduction
N-Channel 60 V 120A (Tc) 188W (Tc) Surface Mount PG-TO263-3
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