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TK3R1E04PL,S1X
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 40V 100A TO220
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.4V @ 500µA
Operating Temperature:
175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
63.4 NC @ 10 V
Rds On (Max) @ Id, Vgs:
3.8mOhm @ 30A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tube
Drain To Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4670 PF @ 20 V
Mounting Type:
Through Hole
Series:
U-MOSIX-H
Supplier Device Package:
TO-220
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Power Dissipation (Max):
87W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK3R1E04
Model Number:
TK3R1E04PL,S1X
Introduction
N-Channel 40 V 100A (Tc) 87W (Tc) Through Hole TO-220
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