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IQE013N04LM6SCATMA1
manufacturer:
Infineon Technologies
Description:
OPTIMOS LOWVOLTAGE POWER MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
41 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
3800 PF @ 20 V
Series:
OptiMOS™ 6
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2V @ 51µA
Supplier Device Package:
PG-WHSON-8-1
Rds On (Max) @ Id, Vgs:
1.35mOhm @ 20A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
2.5W (Ta), 107W (Tc)
Package / Case:
8-PowerWDFN
Drain To Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
31A (Ta), 205A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
IQE013N04LM6SCATMA1
Introduction
N-Channel 40 V 31A (Ta), 205A (Tc) 2.5W (Ta), 107W (Tc) Surface Mount PG-WHSON-8-1
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