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TK42E12N1,S1X
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N CH 120V 88A TO-220
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
52 NC @ 10 V
Rds On (Max) @ Id, Vgs:
9.4mOhm @ 21A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
120 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3100 PF @ 60 V
Mounting Type:
Through Hole
Series:
U-MOSVIII-H
Supplier Device Package:
TO-220
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
88A (Tc)
Power Dissipation (Max):
140W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK42E12
Model Number:
TK42E12N1,S1X
Introduction
N-Channel 120 V 88A (Tc) 140W (Tc) Through Hole TO-220
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