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IPP60R385CP
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 600V 9A TO220-3-1
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
Product Status:
Active
Mounting Type:
Through Hole
Package:
Bulk
Vgs(th) (Max) @ Id:
3.5V @ 340µA
Series:
CoolMOS™
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
22 NC @ 10 V
Supplier Device Package:
PG-TO220-3-1
Rds On (Max) @ Id, Vgs:
385mOhm @ 5.2A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
790 PF @ 100 V
Drain To Source Voltage (Vdss):
600 V
Power Dissipation (Max):
83W (Tc)
Package / Case:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
IPP60R385CP
Introduction
N-Channel 600 V 9A (Tc) 83W (Tc) Through Hole PG-TO220-3-1
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