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IQE030N06NM5SCATMA1
manufacturer:
Infineon Technologies
Description:
OPTIMOS LOWVOLTAGE POWER MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
49 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
3800 PF @ 30 V
Series:
OptiMOS™ 5
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3.3V @ 50µA
Supplier Device Package:
PG-WHSON-8-1
Rds On (Max) @ Id, Vgs:
3mOhm @ 20A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Power Dissipation (Max):
2.5W (Ta), 100W (Tc)
Package / Case:
8-PowerWDFN
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
21A (Ta), 132A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
IQE030N06NM5SCATMA1
Introduction
N-Channel 60 V 21A (Ta), 132A (Tc) 2.5W (Ta), 100W (Tc) Surface Mount PG-WHSON-8-1
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