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Home > Products > > SIDR578EP-T1-RE3

SIDR578EP-T1-RE3

manufacturer:
Vishay Siliconix
Description:
N-CHANNEL 150 V (D-S) 175C MOSFE
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
49 NC @ 10 V
Rds On (Max) @ Id, Vgs:
8.8mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
7.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain To Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2540 PF @ 75 V
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen V
Supplier Device Package:
PowerPAK® SO-8DC
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
17.4A (Ta), 78A (Tc)
Power Dissipation (Max):
7.5W (Ta), 150W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIDR578
Model Number:
SIDR578EP-T1-RE3
Introduction
N-Channel 150 V 17.4A (Ta), 78A (Tc) 7.5W (Ta), 150W (Tc) Surface Mount PowerPAK® SO-8DC
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