english
TK160F10N1L,LQ
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 100V 160A TO220SM
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 1mA
Operating Temperature:
175°C
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
122 NC @ 10 V
Rds On (Max) @ Id, Vgs:
2.4mOhm @ 80A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
10100 PF @ 10 V
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
TO-220SM(W)
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
160A (Ta)
Power Dissipation (Max):
375W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK160F10
Model Number:
TK160F10N1L,LQ
Introduction
N-Channel 100 V 160A (Ta) 375W (Tc) Surface Mount TO-220SM(W)
Send RFQ
Stock:
MOQ: