NVMJST1D2N04CTXG
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 200µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
10-PowerLSOP (0.209", 5.30mm Width) Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
82 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.25mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
5340 PF @ 20 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
10-TCPAK
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
451A (Tc)
Power Dissipation (Max):
454W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVMJST1D
Model Number:
NVMJST1D2N04CTXG
Introduction
N-Channel 40 V 451A (Tc) 454W (Tc) Surface Mount 10-TCPAK
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