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SQJQ184E-T1_GE3
manufacturer:
Vishay Siliconix
Description:
AUTOMOTIVE N-CHANNEL 80 V (D-S)
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
272 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
16010 PF @ 25 V
Series:
Automotive, AEC-Q101, TrenchFET®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Supplier Device Package:
PowerPAK® 8 X 8
Rds On (Max) @ Id, Vgs:
1.4mOhm @ 20A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
600W (Tc)
Package / Case:
PowerPAK® 8 X 8
Drain To Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
430A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
SQJQ184E-T1_GE3
Introduction
N-Channel 80 V 430A (Tc) 600W (Tc) Surface Mount PowerPAK® 8 x 8
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