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SIDR610EP-T1-RE3
manufacturer:
Vishay Siliconix
Description:
N-CHANNEL 200 V (D-S) 175C MOSFE
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
38 NC @ 10 V
Rds On (Max) @ Id, Vgs:
31.9mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
7.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1380 PF @ 100 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® SO-8DC
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
8.9A (Ta), 39.6A (Tc)
Power Dissipation (Max):
7.5W (Ta), 150W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIDR610
Model Number:
SIDR610EP-T1-RE3
Introduction
N-Channel 200 V 8.9A (Ta), 39.6A (Tc) 7.5W (Ta), 150W (Tc) Surface Mount PowerPAK® SO-8DC
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