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TK7Q60W,S1VQ
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 600V 7A IPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.7V @ 350µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-251-3 Stub Leads, IPak
Gate Charge (Qg) (Max) @ Vgs:
15 NC @ 10 V
Rds On (Max) @ Id, Vgs:
600mOhm @ 3.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
490 PF @ 300 V
Mounting Type:
Through Hole
Series:
DTMOSIV
Supplier Device Package:
I-Pak
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
7A (Ta)
Power Dissipation (Max):
60W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK7Q60
Model Number:
TK7Q60W,S1VQ
Introduction
N-Channel 600 V 7A (Ta) 60W (Tc) Through Hole I-Pak
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