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CSD19535KTT
manufacturer:
Texas Instruments
Description:
MOSFET N-CH 100V 200A DDPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Gate Charge (Qg) (Max) @ Vgs:
98 NC @ 10 V
Rds On (Max) @ Id, Vgs:
3.4mOhm @ 100A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
7930 PF @ 50 V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
DDPAK/TO-263-3
Mfr:
Texas Instruments
Current - Continuous Drain (Id) @ 25°C:
200A (Ta)
Power Dissipation (Max):
300W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD19535
Model Number:
CSD19535KTT
Introduction
N-Channel 100 V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3
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