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CSD19501KCS
manufacturer:
Texas Instruments
Description:
MOSFET N-CH 80V 100A TO220-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
50 NC @ 10 V
Rds On (Max) @ Id, Vgs:
6.6mOhm @ 60A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tube
Drain To Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3980 PF @ 40 V
Mounting Type:
Through Hole
Series:
NexFET™
Supplier Device Package:
TO-220-3
Mfr:
Texas Instruments
Current - Continuous Drain (Id) @ 25°C:
100A (Ta)
Power Dissipation (Max):
217W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD19501
Model Number:
CSD19501KCS
Introduction
N-Channel 80 V 100A (Ta) 217W (Tc) Through Hole TO-220-3
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