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SIHA22N60EL-GE3
manufacturer:
Vishay Siliconix
Description:
N-CHANNEL600V
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
74 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tape & Reel (TR)
Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds:
1690 PF @ 100 V
Series:
-
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
5V @ 250µA
Supplier Device Package:
TO-220 Full Pack
Rds On (Max) @ Id, Vgs:
197mOhm @ 11A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
35W (Tc)
Package / Case:
TO-220-3 Full Pack
Drain To Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
SIHA22N60EL-GE3
Introduction
N-Channel 600 V 21A (Tc) 35W (Tc) Through Hole TO-220 Full Pack
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