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BSC093N15NS5SCATMA1
manufacturer:
Infineon Technologies
Description:
TRENCH >=100V
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
40.7 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
3230 PF @ 75 V
Series:
OptiMOS™ 5
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4.6V @ 107µA
Supplier Device Package:
PG-TDSON-8-7
Rds On (Max) @ Id, Vgs:
9.3mOhm @ 44A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
8V, 10V
Power Dissipation (Max):
139W (Tc)
Package / Case:
8-PowerTDFN
Drain To Source Voltage (Vdss):
150 V
Current - Continuous Drain (Id) @ 25°C:
87A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
BSC093N15NS5SCATMA1
Introduction
N-Channel 150 V 87A (Tc) 139W (Tc) Surface Mount PG-TDSON-8-7
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