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Home > Products > > SIHK185N60EF-T1GE3

SIHK185N60EF-T1GE3

manufacturer:
Vishay Siliconix
Description:
EF SERIES POWER MOSFET WITH FAST
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
32 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
1081 PF @ 100 V
Series:
EF
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
5V @ 250µA
Supplier Device Package:
PowerPAK®10 X 12
Rds On (Max) @ Id, Vgs:
193mOhm @ 9.5A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
114W (Tc)
Package / Case:
8-PowerBSFN
Drain To Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
SIHK185N60EF-T1GE3
Introduction
N-Channel 600 V 16A (Tc) 114W (Tc) Surface Mount PowerPAK®10 x 12
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