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ISC009N06LM5ATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 60V 41A/348A TSON-8
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.3V @ 147µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
209 NC @ 10 V
Rds On (Max) @ Id, Vgs:
0.9mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
13000 PF @ 30 V
Mounting Type:
Surface Mount
Series:
OptiMOS™ 5
Supplier Device Package:
PG-TSON-8-3
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
41A (Ta), 348A (Tc)
Power Dissipation (Max):
3W (Ta), 214W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
ISC009N
Model Number:
ISC009N06LM5ATMA1
Introduction
N-Channel 60 V 41A (Ta), 348A (Tc) 3W (Ta), 214W (Tc) Surface Mount PG-TSON-8-3
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